Nonvolatile memory integrated circuit with built-in redundancy

摘要

According to one embodiment, a semiconductor integrated circuit includes a memory cell including first and second electrodes and a resistance change film therebetween, and a control circuit controlling a potential difference between the first and second electrodes. The control circuit reversibly changes the memory cell to a first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode. The control circuit reversibly changes the memory cell to a second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode.

主权项

1. A semiconductor integrated circuit comprising:
a memory cell including first and second electrodes and a resistance change film therebetween, the resistance change film being reversibly changeable between first and second resistive states; and a control circuit controlling a potential difference between the first and second electrodes, wherein the control circuit reversibly changes the memory cell to the first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode, the control circuit reversibly changes the memory cell to the second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode, and the control circuit irreversibly fixes the memory cell to a third resistive state by applying a fifth potential to the first electrode and by applying a sixth potential greater than the fifth potential to the second electrode.