FinFET device including a dielectrically isolated silicon alloy fin

摘要

A method includes forming a fin on a semiconductor substrate. An isolation structure is formed adjacent the fin. A silicon alloy material is formed on a portion of the fin extending above the isolation structure. A thermal process is performed to define a silicon alloy fin portion from the silicon alloy material and the fin and to define a first insulating layer separating the fin from the substrate.

主权项

1. A method, comprising:
forming a fin on a semiconductor substrate; forming an isolation structure adjacent said fin; depositing a first layer to form a silicon alloy material layer above and in direct contact with an outer sidewall surface of said fin extending above said isolation structure after forming said isolation structure; and performing a thermal process to define a silicon alloy fin portion from said silicon alloy material layer and said fin and to define a first insulating layer separating said fin from said substrate.