发明名称 |
Integrated fan-out structure with guiding trenches in buffer layer |
摘要 |
A bottom package includes a molding compound, a buffer layer over and contacting the molding compound, and a through-via penetrating through the molding compound. A device die is molded in the molding compound. A guiding trench extends from a top surface of the buffer layer into the buffer layer, wherein the guiding trench is misaligned with the device die. |
申请公布号 |
US9633895(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201615215195 |
申请日期 |
2016.07.20 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tsai Po-Hao;Hsu Feng-Cheng;Cheng Li-Hui;Hung Jui-Pin;Lin Jing-Cheng |
分类号 |
H01L21/768;H01L21/56;H01L23/31;H01L21/822;H01L23/00;H01L21/683;H01L25/065;H01L25/10;H01L25/00 |
主分类号 |
H01L21/768 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A method comprising:
forming a first package comprising:
forming a through-via over a dielectric buffer layer;placing a device die over the dielectric buffer layer;encapsulating the device die and the through-via in an encapsulating material;planarizing the encapsulating material to expose the through-via and a metal pillar of the device die; andforming redistribution lines overlying and electrically coupling to the through-via and the metal pillar; flipping the first package upside-down; forming openings in the dielectric buffer layer to expose the through-via; and forming a guiding trench in the dielectric buffer layer. |
地址 |
Hsin-Chu TW |