发明名称 Integrated fan-out structure with guiding trenches in buffer layer
摘要 A bottom package includes a molding compound, a buffer layer over and contacting the molding compound, and a through-via penetrating through the molding compound. A device die is molded in the molding compound. A guiding trench extends from a top surface of the buffer layer into the buffer layer, wherein the guiding trench is misaligned with the device die.
申请公布号 US9633895(B2) 申请公布日期 2017.04.25
申请号 US201615215195 申请日期 2016.07.20
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Tsai Po-Hao;Hsu Feng-Cheng;Cheng Li-Hui;Hung Jui-Pin;Lin Jing-Cheng
分类号 H01L21/768;H01L21/56;H01L23/31;H01L21/822;H01L23/00;H01L21/683;H01L25/065;H01L25/10;H01L25/00 主分类号 H01L21/768
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A method comprising: forming a first package comprising: forming a through-via over a dielectric buffer layer;placing a device die over the dielectric buffer layer;encapsulating the device die and the through-via in an encapsulating material;planarizing the encapsulating material to expose the through-via and a metal pillar of the device die; andforming redistribution lines overlying and electrically coupling to the through-via and the metal pillar; flipping the first package upside-down; forming openings in the dielectric buffer layer to expose the through-via; and forming a guiding trench in the dielectric buffer layer.
地址 Hsin-Chu TW