发明名称 |
Methods for depositing dielectric films via physical vapor deposition processes |
摘要 |
In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness. |
申请公布号 |
US9633839(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201514744688 |
申请日期 |
2015.06.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Zeng Weimin;Nguyen Thanh X.;Cheng Yana;Cao Yong;Diehl Daniel Lee;Guggilla Srinivas;Wang Rongjun;Tang Xianmin |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
Moser Taboada |
代理人 |
Moser Taboada ;Taboada Alan |
主权项 |
1. A method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber, comprising:
(a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma to adhere monoatomic hydrogen molecules formed in the first plasma to open bonds at a surface of the dielectric layer; and (e) repeating (a)-(d) to deposit the dielectric layer to a final thickness. |
地址 |
Santa Clara CA US |