| 发明名称 |
Silicon nanocrystal light emitting diode and fabricating method thereof |
| 摘要 |
Disclosed is a silicon nano crystal light emitting diode, including: a photoelectric conversion layer formed of a silicon nitride layer including a silicon nano crystal; an electron injection layer formed on the photoelectric conversion layer; and a hole injection layer, which faces the electron injection layer with the photoelectric conversion layer interposed therebetween, has an energy band gap higher than that of the photoelectric conversion layer, and has a refractive index lower than that of a silicon thin film. |
| 申请公布号 |
US9640736(B2) |
申请公布日期 |
2017.05.02 |
| 申请号 |
US201615013803 |
申请日期 |
2016.02.02 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
Huh Chul;Kim Bong Kyu;Ahn Chang Geun |
| 分类号 |
H01L29/06;H01L21/00;H01L33/50;H01L33/26 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A silicon nano crystal light emitting diode, comprising:
a photoelectric conversion layer formed of a silicon nitride layer including a silicon nano crystal; an electron injection layer formed on the photoelectric conversion layer; and a hole injection layer, which faces the electron injection layer with the photoelectric conversion layer interposed therebetween, has an energy band gap higher than that of the photoelectric conversion layer, and has a refractive index lower than that of a silicon thin film, wherein the hole injection layer is formed of a p-type nitride semiconductor thin film, and wherein the nitride semiconductor thin film includes any one of GaN, AlN, InN, AlGaN, InGaN, InAlN, and InAlGaN. |
| 地址 |
Daejeon KR |
