发明名称 |
Insulating layer for planarization and definition of the active region of a nanowire device |
摘要 |
Various embodiments include methods of fabricating a semiconductor device that include forming a plurality of nanowires on a support, wherein each nanowire comprises a first conductivity type semiconductor core and a second conductivity type semiconductor shell over the core, forming an insulating material layer over at least a portion of the plurality of nanowires such that at least a portion of the insulating material layer provides a substantially planar top surface, removing a portion of the insulating material layer to define an active region of nanowires, and forming an electrical contact over the substantially planar top surface of the insulating material layer. |
申请公布号 |
US9640723(B2) |
申请公布日期 |
2017.05.02 |
申请号 |
US201514966124 |
申请日期 |
2015.12.11 |
申请人 |
GLO AB |
发明人 |
Herner Scott Brad |
分类号 |
H01L21/00;H01L29/06;H01L27/15;H01L33/24;H01L33/06;H01L33/00;H01L21/02;H01L33/08;H01L33/32;H01L33/42;H01L33/44;H01L33/18 |
主分类号 |
H01L21/00 |
代理机构 |
The Marbury Law Group PLLC |
代理人 |
The Marbury Law Group PLLC |
主权项 |
1. A method of fabricating a semiconductor device, comprising:
forming a plurality of nanowires on a support, wherein each nanowire comprises a first conductivity type semiconductor core and a second conductivity type semiconductor shell over the core; forming an insulating material layer over at least a portion of the plurality of nanowires such that at least a portion of the insulating material layer provides a substantially planar top surface; removing a portion of the insulating material layer to define an active region of nanowires; forming a conductive material layer over at least a portion of the insulating material layer and the plurality of nanowires in the active region; and forming an electrical contact over the substantially planar top surface of the insulating material layer, wherein: the electrical contact is electrically connected to the conductive material layer; and the conductive material layer comprises a p-electrode which contacts the second conductivity type semiconductor shell of the nanowires in the active region. |
地址 |
Lund SE |