发明名称 Method of manufacturing solar cell and method of forming doping region
摘要 A method of manufacturing a solar cell is disclosed. The method includes forming a doping region including first and second portions having different doping concentrations by ion-implanting a dopant into a semiconductor substrate and forming an electrode connected to the doping region. In the forming of the doping region, the first and second portions are simultaneously formed by the same process using a mask that is disposed at a distance from the semiconductor substrate.
申请公布号 US9640707(B2) 申请公布日期 2017.05.02
申请号 US201414289172 申请日期 2014.05.28
申请人 LG ELECTRONICS INC. 发明人 Kim Jinsung;Lee Daeyong
分类号 H01L31/18;H01L21/265;H01L21/223;H01L21/266;H01L31/068 主分类号 H01L31/18
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A method of manufacturing a solar cell, the method comprising: forming a doping region comprising first and second portions having different doping concentrations by ion-implanting a dopant into a semiconductor substrate; and forming an electrode connected to the doping region, wherein, in the forming of the doping region, the first and second portions are simultaneously formed by the same process using a mask that is spaced apart from the semiconductor substrate, wherein, in the forming of the doping region, the first and second portions are simultaneously formed through a single ion implantation, wherein, in the forming of the doping region, ions of the dopant are implanted in a state in which the mask comprising an opening to expose a region corresponding to the first portion and a cover part to cover a region corresponding to the second portion is positioned on the semiconductor substrate at a distance, wherein the ions of the dopant are implanted into the semiconductor substrate by passing through the opening and spreading out from the opening, wherein the ions of the dopant having passed through the opening are implanted into the first portion of the semiconductor substrate, the ions of the dopant having passed through the opening are partially implanted into the second portion of the semiconductor substrate by spreading outside of the opening, and wherein the first portion has a relatively high doping concentration than the second portion.
地址 Seoul KR