High quantum efficiency photodetector

摘要

A photodetector including a photoelectric conversion structure made of a semiconductor material and, on a light-receiving surface of the conversion structure, a stack of first and second diffractive elements, the second element being above the first element, wherein: the first element includes at least one pad made of a material having an optical index n1, laterally surrounded with a region made of a material having an optical index n2 different from n1; the second element includes at least one pad made of a material having an optical index n3, laterally surrounded with a region made of a material having an optical index n4 different from n3; the pads of the first and second elements are substantially vertically aligned; and optical index differences n1−n2 and n3−n4 have opposite signs.

主权项

1. A photodetector comprising a photoelectric conversion structure made of a semiconductor material and, on a light-receiving surface of the conversion structure, a stack of first and second diffractive elements, the second element being above the first element, wherein:
the first element comprises at least one pad made of a material having an optical index n1, laterally surrounded with a region made of a material having an optical index n2 different from n1; the second element comprises at least one pad made of a material having an optical index n3, laterally surrounded with a region made of a material having an optical index n4 different from n3; the pads of the first and second elements are substantially vertically aligned; and optical index differences n1−n2 and n3−n4 have opposite signs.