Method of manufacturing a low noise photodiode

摘要

A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.

主权项

1. A method of manufacturing a photodiode comprising a useful layer made of a semi-conductor alloy, the useful layer having a band gap value which decreases from a first upper face to an opposite lower face, said method comprising:
producing a first doped region situated in the useful layer and forming a PN junction with a second doped region of the useful layer, said producing a first doped region comprising:
a first doping step, so as to produce a base portion of the first doped region; anda second doping step, so as to produce at least one protuberance of the first doped region, said protuberance protruding from the base portion and in the direction of the lower face of the useful layer, wherein the average band gap value in the protuberance is less than the average band gap value in the base portion, whereinthe first doping step comprises a first ion implantation implementing a first implantation energy and a first implantation surface; andthe second doping step comprises a second ion implantation implementing a second implantation energy and a second implantation surface, the second implantation energy being greater than the first implantation energy, and the second implantation surface being at least two times smaller than the first implantation surface.