Semiconductor device including oxide semiconductor

摘要

A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.

主权项

1. A semiconductor device comprising:
a first insulating film; an oxide semiconductor film over the first insulating film; a second insulating film over the oxide semiconductor film; and a third insulating film over the second insulating film, wherein the second insulating film includes oxygen and silicon, wherein the third insulating film includes nitrogen and silicon, wherein indium is included in a vicinity of an interface between the second insulating film and the third insulating film, and wherein a concentration of indium at the interface is higher than a concentration of indium at a center of the second insulating film.