Substrate with crystallized silicon film and manufacturing method thereof

摘要

The present invention relates to a substrate with a crystallized silicon film and manufacturing method thereof, wherein the substrate with the crystallized silicon film comprises: a substrate, which is a polymer substrate; and a crystallized silicon film, which is formed on at least one surface of the substrate, wherein the crystallized silicon film comprises a plurality of silicon crystals with column structures, and the crystallinity of the crystallized silicon film is higher than 90%.

主权项

1. A manufacturing method of a substrate with a crystallized silicon film, comprising the steps of:
(A) providing a substrate, a silicon source, and a hydrogen gas, wherein the substrate is a polymer substrate, and the silicon source is a liquid silicon source selected from the group consisting of SiCl4, Si2Cl6 and a combination thereof; (B) placing the substrate into a reduced pressure environment of a pressure less than 10−2 torr, and using the hydrogen gas as a carrier gas to introduce the silicon source into the reduced pressure environment, wherein a flow rate of the carrier gas is 10-20 sccm, and the carrier gas of the hydrogen gas is injected into the liquid silicon source to introduce vapor of the liquid silicon source into the reduced pressure environment; (C) introducing 50˜600 sccm of the carrier gas additionally, and performing a microwave plasma enhanced chemical vapor deposition (MWPECVD) with a microwave power of 250˜2000 W under an operation pressure of 1˜10 torr; and (D) depositing a crystallized silicon film on at least one surface of the substrate to form the substrate with the crystallized silicon film.