发明名称 NEGATIVE ELECTRODE FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY
摘要 A non-aqueous electrolyte secondary battery including a silicon material as a negative electrode active material has good discharge rate characteristics. A negative electrode according to an exemplary embodiment includes a negative-electrode current collector and a negative-electrode mixture layer formed on the current collector. The negative-electrode mixture layer contains graphite and a silicon material. A first region that extends from the surface of the mixture layer remote from the negative-electrode current collector in the thickness direction of the negative-electrode mixture layer and has a thickness equal to 40% of the thickness of the mixture layer contains a larger amount of the silicon material than a second region that extends from the surface of the mixture layer adjacent to the negative-electrode current collector and has a thickness equal to 40% of the thickness of the mixture layer. The first region has a lower density than the second region.
申请公布号 US2017125806(A1) 申请公布日期 2017.05.04
申请号 US201515318103 申请日期 2015.08.27
申请人 SANYO Electric Co., Ltd. 发明人 WANG Na;KASAMATSU Shinji;KATO Yoshio
分类号 H01M4/38;H01M10/0525;H01M4/587;H01M4/133;H01M4/48 主分类号 H01M4/38
代理机构 代理人
主权项 1. A negative electrode for a non-aqueous electrolyte secondary battery, comprising: a negative-electrode current collector; and a negative-electrode mixture layer formed on the current collector, wherein the negative-electrode mixture layer contains graphite and a silicon material, a first region that extends from a surface of the mixture layer remote from the negative-electrode current collector in a thickness direction of the negative-electrode mixture layer and has a thickness equal to 40% of a thickness of the mixture layer contains a larger amount of the silicon material than a second region that extends from a surface of the mixture layer adjacent to the negative-electrode current collector and has a thickness equal to 40% of the thickness of the mixture layer, and the first region has a lower density than the second region.
地址 Daito-shi, Osaka JP