发明名称 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE
摘要 Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.
申请公布号 US2017125639(A1) 申请公布日期 2017.05.04
申请号 US201715402491 申请日期 2017.01.10
申请人 LG INNOTEK CO., LTD. 发明人 JEONG Hwan Hee;LEE Sang Youl;SONG June O.;MOON JiHyung;CHOI Kwang Ki
分类号 H01L33/44;H01L33/42;H01L33/38 主分类号 H01L33/44
代理机构 代理人
主权项 1. A light emitting device, comprising: a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; an electrode layer on the second conductive type semiconductor layer; an insulating layer on the second conductive type semiconductor layer; a first electrode on the first conductive type semiconductor layer; and a second electrode on the second conductive type semiconductor layer, wherein the insulating layer includes a first surface, a side surface, and a second surface, wherein the first surface, relative to the second surface, is proximate to the second conductive type semiconductor layer, wherein the second surface is opposite to the first surface, wherein the electrode layer has a hole, and the second electrode contacts the second conductive type semiconductor layer through the hole of the electrode layer, wherein the second electrode comprises an upper portion and a lower portion under the upper portion, wherein the lower portion is surrounded by the hole of the electrode layer, wherein the first surface of the insulating layer contacts a top surface of the second conductive type semiconductor layer, and wherein the second surface of the insulating layer contacts the electrode layer.
地址 Seoul KR