Four-Element Light Emitting Diode with Transparent Substrate and Preparation Method

摘要

A four-element light emitting diode with a transparent substrate, comprising a AlGaInP light emitting diode (LED) epitaxial wafer, and the surface of a GaP layer of the AlGaInP-LED epitaxial wafer is roughened into a bonding surface, a film is plated on the bonding surface and is bonded with a transparent substrate, and finally a GaAs substrate is removed. The transparent bonding disclosed herein can replace the GaAs substrate made of light absorption materials with the transparent substrate by substrate transfer technology, increasing the light emitting efficiency of the light emitting diode chip and avoiding extremely low external quantum efficiency caused due to the limitations of the material of conventional AlGaInP light emitting diode and the substrate; in addition, with the support of the cut path pre-etching technology, back melting or splashing during the epitaxial layer cutting process is avoided, light emitting efficiency is increased and electric leakage risk is eliminated.

主权项

1. A four-element light emitting diode (LED) with a transparent substrate, comprising an AlGaInP LED epitaxial wafer, wherein: a surface of a GaP layer of the AlGaInP LED epitaxial wafer is roughened into a bonding surface, a film is plated on the bonding surface and is bonded with a transparent substrate, and a GaAs substrate is removed to form the LED with the transparent substrate.