SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

摘要

A method of manufacturing a solar cell is discussed. The method includes forming a textured structure on a front surface of a silicon substrate; forming a front passivation layer on the front surface of the silicon substrate; forming an anti-reflection layer on the front passivation layer; forming a first layer having a dopant of a first conductive type on a first portion of a rear surface of the silicon substrate; forming a second layer having a dopant of a second conductive type on the first layer and a second portion of the rear surface of the silicon substrate; diffusing the dopant of the first layer and the dopant of the second layer into the silicon substrate to form a n-doped region and a p-doped region, respectively, wherein the n-doped region and the p-doped region are disposed at about a same depth from the rear surface of the silicon substrate.

主权项

1. A method of manufacturing a solar cell, the method comprising:
forming a textured structure on a front surface of a silicon substrate; forming a front passivation layer on the front surface of the silicon substrate; forming an anti-reflection layer on the front passivation layer; forming a first layer having a dopant of a first conductive type on a first portion of a rear surface of the silicon substrate; forming a second layer having a dopant of a second conductive type on the first layer and a second portion of the rear surface of the silicon substrate; diffusing the dopant of the first layer and the dopant of the second layer into the silicon substrate to form a n-doped region and a p-doped region, respectively, wherein the n-doped region and the p-doped region are disposed at about a same depth from the rear surface of the silicon substrate, and wherein the first layer shields the silicon substrate from the dopant of the second layer; forming a rear passivation layer on the n-doped region and the p-doped region, the rear passivation layer including at least one of silicon nitride (SiNx) and silicon oxide (SiOx); removing portions of the rear passivation layer to partially expose the n-doped region and the p-doped region; and forming a first electrode electrically connected to the n-doped region and a second electrode electrically connected to the p-doped region, wherein the forming of the first or second electrode comprises: forming a metal layer having a first section in contact with one of the n-doped region and the p-doped region, and a second section in contact with the rear passivation layer;
forming a diffusion barrier layer on the metal layer;forming a first conductive layer on the diffusion barrier layer; andforming a second conductive layer on the first conductive layer.