发明名称 BISPECTRAL MATRIX SENSOR AND METHOD FOR MANUFACTURING THE SAME
摘要 The present invention relates to a method for manufacturing a bispectral matrix detector comprising the following steps: providing a monotype matrix detector; depositing, on the sensitive surface (3) of the monotype matrix detector, a dual-band interference filter (5) allowing the radiation in the first and second frequency bands to pass therethrough; depositing a first interference filter (4a) vertically in line with photosites (31a) intended for sensing in the first frequency band; depositing a second interference filter (4b) vertically in line with photosites (31b) intended for sensing in the second frequency band, one of the first (4a) and second (4b) interference filters being a low-pass filter cutting the second frequency band, and the other a high-pass filter cutting the first frequency band.
申请公布号 US2017125614(A1) 申请公布日期 2017.05.04
申请号 US201515318342 申请日期 2015.06.12
申请人 SAFRAN ELECTRONICS & DEFENSE 发明人 SIK Herve;FLEURY Joel;LAPRAT Patrice
分类号 H01L31/0216;G02B5/28;G02B5/20;H01L27/146 主分类号 H01L31/0216
代理机构 代理人
主权项 1. A method for manufacturing a bispectral array detector, wherein it includes the following steps; providing a monotype array detector comprising a sensitive surface composed of alternating photosites intended to sense in a first frequency band and photosites intended to sense in a second frequency band, deposition, on the sensitive surface, of an dual-band interference filter letting through radiation in the first and the second frequency band; deposition of a first interference filter directly above the photosites intended to sense in the first frequency band; deposition of a second interference filter directly above the photosites intended to sense in the second frequency band,one of the interference filters from the first and the second interference filter being a low-pass filter cutting the second frequency band, and the other a high-pass filter cutting the first frequency band.
地址 Boulogne-Billancourt FR