| 发明名称 |
SCHOTTKY DIODE HAVING A WELL WITH PERIPHERIAL CATHOD REGIONS AND CENTER ANDOE REGION |
| 摘要 |
In some embodiments, a semiconductor device includes a first well region configured to be an anode of the semiconductor device, a first doped region configured to be a cathode of the semiconductor device, a second doped region configured to be another cathode of the semiconductor device, and a conductive region. The first well region is disposed between the first doped region and the second doped region, and is configured for electrical connection of the conductive region. |
| 申请公布号 |
US2017125608(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201514928643 |
申请日期 |
2015.10.30 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
LU HUI-TING;JONG YU-CHANG;WANG PEI-LUN |
| 分类号 |
H01L29/872;H01L29/66;H01L21/762;H01L29/06;H01L21/761 |
主分类号 |
H01L29/872 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first well region configured to be an anode of the semiconductor device; a first doped region configured to be a cathode of the semiconductor device; a second doped region configured to be another cathode of the semiconductor device; and a conductive region, wherein the first well region is disposed between the first doped region and the second doped region, and the first well region is configured for electrical connection of the conductive region. |
| 地址 |
HSINCHU TW |
