SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR

摘要

A junction field effect transistor (JFET) comprises an insulating carrier substrate, a base semiconductor substrate formed on the insulating carrier substrate and a gate region formed on the base semiconductor substrate. The gate region forms a junction with the base semiconductor substrate. The JFET further comprises a first source/drain region formed on the base semiconductor substrate and located on a first side of the gate region and a second source/drain region formed on the base semiconductor substrate and located on a second side of the gate region. A gate stack is deposited on the gate region, a first source/drain stack is deposited on the first source/drain region and a second source/drain stack is deposited on the second source/drain region. At least one of the gate stack, first source/drain stack and second source/drain stack overlaps onto another one of the gate stack, first source/drain stack and second source/drain stack.

主权项

1. A junction field effect transistor comprising:
an insulating carrier substrate; a base semiconductor substrate formed on the insulating carrier substrate; a gate region formed on the base semiconductor substrate wherein the gate region forms a junction with the base semiconductor substrate; a first source/drain region formed on the base semiconductor substrate and located on a first side of the gate region; a second source/drain region formed on the base semiconductor substrate and located on a second side of the gate region; and a gate stack deposited on the gate region, a first source/drain stack deposited on the first source/drain region and a second source/drain stack deposited on the second source/drain region wherein at least one of the gate stack, first source/drain stack and second source/drain stack overlaps onto another one of the gate stack, first source/drain stack and second source/drain stack.