| 摘要 |
Semiconductor devices having thin bodies of a semiconductor material are made from a wafer of the semiconductor material which is thicker than the bodies of the devices. The thicker wafer is provided with spaced thinner portions of the desired area and thickness of the bodies of the devices to be formed by etching recesses in one surface of the wafer. The recesses are formed with flat bottoms which are of the desired area of the bodies of the devices. A masking layer is coated on the bottom of each of the recesses. The active region of each of the devices is formed at the other surface of the wafer over each of the recesses. The semiconductor material between the thin portions of the wafer is then removed by etching the wafer from the one surface of the wafer so as to separate the thin portions of the wafer to form the individual devices. During the last etching process the masking layers on the bottom of the recess protect the thin portions of the wafer from being etched.
|
