Radiation detector - with semiconductor body and conducting type coated recesses or cavities

摘要

In a semiconductor detector for the measurement and analysis of ionising radiations and high energy particles of the known type comprising. (a) a monocrystalline semiconductor body having a recess on one face, the wall and base of which is covered by >=1 first region of first conducting type, (b) a second region of second conducting type separated from the first by an intermediate intrinsic region, and (c) contacts on the two regions of opposite conducting type, the first region consists of a zone of first conducting type around, and coating at least a part of the recess, supporting the contact and having the form of a thick layer.