| 发明名称 |
Overlay mask |
| 摘要 |
An overlay mask includes a plurality of first patterns, a plurality of second patterns and a plurality of third patterns. The first patterns are arranged within a first pitch. The second patterns are arranged within a second pitch. A first portion of the third patterns are arranged alternately with the first patterns, within the first pitch, and a second portion of the third patterns are arranged alternately with the second patterns, within the second pitch, and the first pitch is not equal to the second pitch. |
| 申请公布号 |
US9470987(B1) |
申请公布日期 |
2016.10.18 |
| 申请号 |
US201514920859 |
申请日期 |
2015.10.22 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Che-Yi;Liou En-Chiuan;Wang Yi-Jing;Tseng Chia-Hsun |
| 分类号 |
G03F7/00;H01L21/30;H01L21/02;H01L21/32;H01L21/26;H01L21/31;G03F7/20;H01L21/266;H01L21/308;H01L21/311;H01L21/3213;H01L21/027 |
主分类号 |
G03F7/00 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. An overlay mask, comprising:
a plurality of regions arranged in an array, wherein the regions at least comprise a first region and a second region parallelly arranged to each other; a plurality of first patterns disposed in a first part of the first region and a second part of the second region; a plurality of second patterns disposed in a second part of the first region and a first part of the second region; and a plurality of third patterns, wherein a portion of the third patterns are arranged alternately to the first patterns and the second patterns respectively in the first region, in a first direction, and another portion of the third patterns are arranged alternately to the first patterns and the second patterns respectively in the second region, in a second direction perpendicular to the first direction. |
| 地址 |
Hsin-Chu TW |
