Process for group III-IV semiconductor nanostructure synthesis and compositions made using same

摘要

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

主权项

1. A nanostructure, comprising:
a Group III-V semiconductor; the nanostructure being substantially free of metallic noble, Group Ib, Group IIb, Group IIIb, and transition metal elements; the nanostructure being a branched nanostructure or having an aspect ratio greater than about 1.2; and the nanostructure having a wurtzite crystal structure or a zinc blende-wurtzite mixed crystal structure.