| 摘要 |
<p>1,267,975. Semi-conductor device manufacture. WESTINGHOUSE ELECTRIC CORP. 7 May, 1969 [24 June, 1968], No. 23269/69. Heading H1K. [Also in Division C7] A semi-conductor device comprises a flexible metal substrate with an insulating layer on one face, a pair of electrodes and a semi-conductor layer extending between them disposed on said layer, and a further insulating layer carrying a third electrode where it overlies the semiconductor. Suitable substrates are ribbons of nickel, copper, aluminium, tin, tantalum, alloys thereof and ferrous alloys such as stainless steel, coated with insulation such as epoxy and epoxypolyamide-imide resin mixes. In the preferred method the film, precleaned by specified processes, is passed in a vacuum chamber beneath a source of the various vapours required and layers are deposited on it successively through appropriately shaped metal masks mounted on a common rotatable holder. Alternatively, the various vapour sources and their associated masks are spatially separated and the tape is stepped forward from one to the next. Finally the tape passes to a testing station and a station where the devices are sealed under a cellulose tape before being wound on to a storage drum. In the first deposition step source and drain electrodes 80-500 Š thick of gold, silver, aluminium, nickel or base alloys thereof are provided. Then a semi-conductor layer of any crystalline form and having a thickness between 40 and 5000 Š and varying with the band gap of the material is deposited, sometimes with the ribbon heated, followed by the gate insulation, preferably >300 Š thick, and finally a 300- 1000 Š gate electrode layer and possibly a passivating layer of silicon oxide. Semiconductor materials specified are silicon, tellurium, tin oxide, lead telluride, cadmium sulphide and selenide, and the arsenides of indium and gallium. Silicon monoxide and dioxide, alumina, calcium and magnesium fluorides, lead silicate, borate and borosilicate glasses and polymers of hexachlorobutadiene, divinyl benzene, aryl sulphones, fluorinated alkenyls and para-xylene, are suitable as gate insulation and aluminium, copper, tin, gold, silver and platinum as gate electrode material.</p> |
