发明名称 |
DISPOSITIF A MEMOIRE NON VOLATILE |
摘要 |
The invention concerns a memory device comprising: a first memory cell comprising a first resistive non-volatile data storage element programmable to store a first bit of data; and a second memory cell comprising a second resistive non-volatile data storage element programmable to store a second bit of data; wherein said first resistive element is configured to have a first data retention duration, and said second resistive element is configured to have a second data retention duration different from said first data retention duration. |
申请公布号 |
FR3008219(B1) |
申请公布日期 |
2016.12.09 |
申请号 |
FR20130056637 |
申请日期 |
2013.07.05 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE |
发明人 |
DI PENDINA GREGORY;JAVERLIAC VIRGILE |
分类号 |
G11C11/16;G11C11/40;G11C11/56;H01L21/8232;H01L21/8239 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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