| 发明名称 |
Methods for producing semiconductor devices |
| 摘要 |
A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier. |
| 申请公布号 |
US9520325(B2) |
申请公布日期 |
2016.12.13 |
| 申请号 |
US201313947135 |
申请日期 |
2013.07.22 |
| 申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
Voerckel Andreas |
| 分类号 |
H01L23/32;H01L21/82;H01L21/56;H01L21/768;H01L23/00 |
主分类号 |
H01L23/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a power semiconductor device, the method comprising:
providing a semiconductor workpiece attached to a carrier, the semiconductor workpiece comprising a semiconductor wafer including one or more kerf regions; dicing the semiconductor workpiece and the attached carrier so as to form at least one individual power semiconductor chip, wherein the semiconductor wafer is diced at the one or more kerf regions and the semiconductor workpiece comprises at least silicon carbide; mounting the at least one power semiconductor chip with a side facing away from the carrier, to an additional carrier; and removing the carrier from the mounted at least one power semiconductor chip. |
| 地址 |
Villach AT |
