Bipolar lateral transistor with controlled doping - has a current gain superior to constant base doped bipolar lateral transistors

摘要

The bipolar lateral transistor, has an emitter, a collector and a base, and is characterised in that between the doped zones constituting the emitter (2) and the collector (4), the substrate doping constituting the base (10) of the transistor is such that the concentration of the substrate in doping agent diminishes in the direction perpendicular to the surface of the substrate counted from the portion of the surface of the transistor situated between the emitter and the collector, in order to attain a minimum value before climbing to a constant value, and that the depth of the position of this minimum doping concentration in the substrate constituting the base is less than the depth of the doped zones constituting the emitter and the collector, so as to avoid gain limitations due to surface and depth effects.