发明名称 Method for producing a photovoltaic cell having a heterojunction, and resulting photovoltaic cell
摘要 A method for producing a heterojunction solar cell including the following successive steps: providing a substrate made from crystalline semiconductor material, doped with a first type of doping, and provided with a first main face; depositing a first layer of intrinsic amorphous semiconductor material on said first main face of the substrate; and forming a second layer of amorphous semiconductor material on the first layer. The method includes deposition of a barrier layer between the first and second layers, said barrier layer being of different nature from those of the first and second layers and includes doping of the second layer by ion implantation.
申请公布号 US9478686(B2) 申请公布日期 2016.10.25
申请号 US201314429654 申请日期 2013.09.23
申请人 COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 Ozanne Anne-Sophie;Munoz Maria-Delfina;Nguyen Nathalie
分类号 H01L31/0256;H01L31/0376;H01L31/0747;H01L31/074;H01L31/20 主分类号 H01L31/0256
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A method for producing a heterojunction solar cell comprising the following successive steps: providing a substrate made from crystalline semiconductor material, doped with a first type of doping, and provided with a first main face, depositing a first layer of intrinsic amorphous semiconductor material on said first main face of the substrate, depositing a barrier layer on the first layer, forming a second layer of amorphous semiconductor material on the barrier layer, and doping the second layer by ion implantation, wherein said barrier layer is a different chemical composition from those of the first layer and second layer and acts as a barrier during the ion implantation.
地址 Paris FR