| 发明名称 | Method of vapor-diffusing impurities | ||
| 摘要 | A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption. | ||
| 申请公布号 | US9478423(B2) | 申请公布日期 | 2016.10.25 |
| 申请号 | US201313954472 | 申请日期 | 2013.07.30 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Takahashi Kazuya;Furusawa Yoshikazu;Okada Mitsuhiro |
| 分类号 | H01L21/223;H01L21/324;H01L21/322;H01L21/22;H01L21/67 | 主分类号 | H01L21/223 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate, comprising: loading the target substrate in an upper part of a wafer boat and the dummy substrate in an lower part of the wafer boat in a substrate loading jig; accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus; and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig, wherein, when the vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption, and wherein the material having properties not allowing boron adsorption is selected from any one of oxide and nitride. | ||
| 地址 | Tokyo JP | ||