Erase method of nonvolatile memory device and storage device employing the same

摘要

A method of erasing a nonvolatile memory device which includes a plurality of memory blocks includes receiving an erase command; erasing a selected memory block among the plurality of memory blocks in response to the erase command; and performing an operation of checking whether a threshold voltage of a selection transistor connected to at least one selection line for selecting strings included in the selected memory block is changed while performing an erase verification operation for checking whether the selected memory block is normally erased.

主权项

1. A method of erasing a nonvolatile memory device which includes a plurality of memory blocks, the method comprising:
receiving an erase command at the nonvolatile memory device; erasing a selected memory block among the plurality of memory blocks in response to the erase command; and performing an operation of checking whether a threshold voltage of a selection transistor connected to at least one selection line for selecting strings included in the selected memory block is changed while performing an erase verification operation for checking whether the selected memory block is normally erased, wherein an erase verification pass voltage applied to the selection transistor during the erase verification operation is less than a read pass voltage applied to the selection transistor during a read operation.