| 摘要 |
<p>An improved semiconductor rectifier device of the type having a monocrystalline semiconductor body having four layer-type zones of alternatingly opposite conductivity types with that portion of the one inner zone which supports the control electrode and extends with the adjacent outer zone serving as the emitter zone to the same major surface of the semiconductor body as the emitter zone, a respective load current electrode ohmically contacting each of the two outer zones of the semiconductor body, and the control electrode ohmically contacting the one of the inner zones of the semiconductor body which borders on the emitter zone. A highly doped zone of a conductivity type opposite that of the above-mentioned one inner zone is formed within said portion of that inner zone at the major surface and laterally displaced from the emitter zone and the control electrode is positioned on the major surface so that at least a portion of the pn-junction formed by the highly doped zone and the inner zone is between the control electrode and the emitter zone, whereby the highly doped zone acts as a barrier for the charge carriers of the control current.</p> |
