发明名称 |
REVERSE POLARITY PROTECTION FOR BIPOLAR IC'S |
摘要 |
<p>1405503 Integrated circuits TEXAS INSTRUMENTS Ltd 16 Nov 1972 53003/72 Heading H1K In order to avoid the risk of damage due to inadvertent reversal of the supply voltage polarity the isolation region 14 of a junctionisolated integrated circuit is connected to a supply terminal 1 through the emitter-collector path of a transistor T 1 formed in one of the isolated islands 15. In the Si circuit shown p<SP>+</SP> isolation walls 14 define islands in an N-type epitaxial layer 12 on a P-type substrate 11. The emitter region 17 of NPN transistor T 1 is connected to the walls 14 via metallization 26, the collector region being connected to the negative supply terminal 1 via metallization 28. The base region 16 is connected to the positive supply terminal via an epitaxial resistor region 19, or via the emitter-collector path of a further transistor whose base electrode is connected via a resistor to the negative supply terminal. In a modification the emitter of T 1 is connected to the negative supply while the collector is connected to the isolation region.</p> |
申请公布号 |
CA985432(A) |
申请公布日期 |
1976.03.09 |
申请号 |
CA19730183466 |
申请日期 |
1973.10.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BEE, EDWARD C. |
分类号 |
H01L27/04;H01L21/822;H01L27/02 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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