| 发明名称 | Microwave irradiation apparatus and substrate treatment method | ||
| 摘要 | In accordance with an embodiment, a microwave irradiation apparatus includes a chamber and a polarizing plate. The chamber is configured to accommodate a substrate and is provided with an introduction port to introduce the microwave applied to the substrate from a direction at an angle within a range of ±45 degrees to a direction horizontal to a surface of the substrate. The polarizing plate is installed between the introduction port and the substrate, and selectively transmits a microwave where an amplitude direction of a magnetic field or an electric field is vertical to the surface of the substrate. | ||
| 申请公布号 | US9532409(B1) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201615059680 | 申请日期 | 2016.03.03 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Aoyama Tomonori |
| 分类号 | H01L21/00;H05B6/64;H01L21/324;H01L21/67;H05B6/70 | 主分类号 | H01L21/00 |
| 代理机构 | Finnegan, Henderson, Farabrow, Garrett & Dunner LLP | 代理人 | Finnegan, Henderson, Farabrow, Garrett & Dunner LLP |
| 主权项 | 1. A microwave irradiation apparatus comprising: a chamber which is configured to accommodate a substrate and is provided with an introduction port to introduce the microwave applied to the substrate from a direction at an angle within a range of ±45 degrees to a direction horizontal to a surface of the substrate; and a polarizing plate which is installed between the introduction port and the substrate, and selectively transmits a microwave where an amplitude direction of a magnetic field or an electric field is vertical to the surface of the substrate. | ||
| 地址 | Tokyo JP | ||