Non-volatile semiconductor memory with nitride sidewall contacting nitride layer of ONO gate stack and methods for producing the same,申请号US201314377278-传众专利搜索

发明名称	Non-volatile semiconductor memory with nitride sidewall contacting nitride layer of ONO gate stack and methods for producing the same
摘要	A non-volatile semiconductor memory free from adverse effects due to process charge is provided. The non-volatile semiconductor memory includes: a silicon substrate; a first silicon oxide film; a second silicon oxide film; a first silicon nitride film; and a second silicon nitride film, wherein the first silicon oxide film is layered on the silicon substrate, the first silicon nitride film is layered on the first silicon oxide film, the second silicon oxide film is layered on the first silicon nitride film, and the second silicon nitride film is layered to have a first part that is in contact with the first silicon nitride film and a second part that is in contact with the silicon substrate.
申请公布号	US9461138(B2)	申请公布日期	2016.10.04
申请号	US201314377278	申请日期	2013.02.22
申请人	SEIKO EPSON CORPORATION	发明人	Fukumoto Yohei;Sasaki Takaoki
分类号	H01L21/28;H01L29/66;H01L29/51;H01L29/788;H01L29/792;H01L21/02	主分类号	H01L21/28
代理机构	Oliff PLC	代理人	Oliff PLC
主权项	1. A non-volatile semiconductor memory comprising: a silicon substrate; a first silicon oxide film; a second silicon oxide film; a third silicon oxide film; a first silicon nitride film; a second silicon nitride film; and a fourth silicon oxide film, wherein the first silicon oxide film and the third silicon oxide film are layered on the silicon substrate, the first silicon nitride film is layered on the first silicon oxide film, the second silicon oxide film is layered on the first silicon nitride film, the third silicon oxide film has a thickness that is smaller than that of the first silicon oxide film, the second silicon nitride film has a first part that is in contact with the first silicon nitride film, the first silicon oxide film and the second silicon oxide film, and a second part that is in contact with and layered on the third silicon oxide film, and the fourth silicon oxide film has a layer structure with the fourth silicon oxide film layered on the second silicon nitride film, which together define a side wall, such that the second silicon nitride film is layered between the fourth silicon oxide film and the third silicon oxide film along a lower surface of the fourth silicon oxide film.
地址	Tokyo JP