发明名称 | Fast exit from DRAM self-refresh | ||
摘要 | Embodiments of the invention describe a dynamic random access memory (DRAM) device that may abort a self-refresh mode to improve the exit time from a DRAM low power state of self-refresh. During execution of a self-refresh mode, the DRAM device may receive a signal (e.g., a device enable signal) from a memory controller operatively coupled to the DRAM device. The DRAM device may abort the self-refresh mode in response to receiving the signal from the memory controller. | ||
申请公布号 | US9460773(B2) | 申请公布日期 | 2016.10.04 |
申请号 | US201514732713 | 申请日期 | 2015.06.06 |
申请人 | Intel Corporation | 发明人 | Bains Kuljit S |
分类号 | G06F12/00;G11C11/406;G11C11/4076 | 主分类号 | G06F12/00 |
代理机构 | Compass IP Law PC | 代理人 | Compass IP Law PC |
主权项 | 1. A system comprising: a dynamic random access memory (DRAM) device, the DRAM device including a memory array, andcontrol logic coupled with the memory array, the control logic capable to abort a self-refresh responsive, at least in part, to a self-refresh exit command, wherein the DRAM device capable to be selectively enabled to abort self-refresh; and a memory controller coupled with the DRAM device, the memory controller capable to issue a valid command subsequent to the self-refresh exit command, wherein a time from the self-refresh exit command to issuance of the valid command is tXS if the DRAM is not enabled to abort self-refresh, and is less than tXS if the DRAM is enabled to abort self-refresh. | ||
地址 | Santa Clara CA US |