| 发明名称 |
METHOD FOR PRODUCTION OF SEMICONDUCTIVE EMITTER DEVICE |
| 摘要 |
<p>PURPOSE:To fabricate stripe type semiconductive emitter device with low temperature rise by forming current suppression layer with low impurity concentration by S diffusion.</p> |
| 申请公布号 |
JPS5228885(A) |
申请公布日期 |
1977.03.04 |
| 申请号 |
JP19750104501 |
申请日期 |
1975.08.30 |
| 申请人 |
FUJITSU LTD |
发明人 |
NISHI HIROSHI;OOSAKA SHIGEO;KUMAI TSUGIO |
| 分类号 |
H01L21/22;H01L33/14;H01L33/30;H01L33/36;H01S5/00;H01S5/042 |
主分类号 |
H01L21/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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