MEMORY WRITE CIRCUIT

摘要

A MOS write circuit includes circuits which are operative during a first interval of a memory cycle of a storage unit to store a predetermined signal to represent a result. During another interval, the circuits logically combine binary information signals applied thereto by the storage unit and a utilization device. In accordance with the result of logically combining the information signals, the circuit selectively modifies the state of a signal representation of the result stored during the first interval. The write circuit further includes output circuits which are rendered operative conditionally by external command signals from the device to switch state during another interval of the same memory cycle in accordance with the stored result as modified, producing complementary output signals representative of either binary ONE or binary ZERO information.