| 摘要 |
A cobalt compound according to the present invention is represented by general formula (I). In general formula (I), R1 to R3 independently represent a linear or branched alkyl group having 1 to 5 carbon atoms. A raw material for forming a thin film according to the present invention contains the cobalt compound represented by general formula (I). The present invention can provide: a cobalt compound which has a low melting point and therefore can be transported in a liquid state and can be decomposed at a low temperature, and also has a high vapor pressure and therefore can be vaporized readily; and a raw material for forming a thin film, which is prepared using the cobalt compound. |
