| 发明名称 |
MANUFACTURE FOR SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To make high density for the semiconductor device of two layer polycrystal Si constitution and to make stable it, by using the SI3N4 film having the mask effect to oxidation and a large dielectric constant for the first gate insulating film. |
| 申请公布号 |
JPS53112686(A) |
申请公布日期 |
1978.10.02 |
| 申请号 |
JP19770026984 |
申请日期 |
1977.03.14 |
| 申请人 |
OKI ELECTRIC IND CO LTD |
发明人 |
MATSUI HIROSHI;ONODA HIROSHI;AOKI AKIHISA;INO MASAYOSHI |
| 分类号 |
H01L27/10;H01L21/283;H01L21/8242;H01L27/108 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 地址 |
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