| 发明名称 |
THERMALLY BALANCED PN JUNCTION |
| 摘要 |
<p>Regions of high resistivity, with respect to the surrounding material, are designed into a semiconductor device at points where hot-spots have been observed. A device made in this manner has very good second breakdown characteristics. One application is in large area junction transistors having an interdigitated base-emitter configuration.</p> |
| 申请公布号 |
CA1041221(A) |
申请公布日期 |
1978.10.24 |
| 申请号 |
CA19750232101 |
申请日期 |
1975.07.23 |
| 申请人 |
RCA CORPORATION |
发明人 |
DENNING, RICHARD;EINTHOVEN, WILLEM G. |
| 分类号 |
H01L29/73;H01L21/331;H01L21/66;H01L27/07;H01L29/00;(IPC1-7):01L29/72;01L29/06 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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