Semiconductor device and method of manufacturing the same

摘要

Possible to form an opening having a sufficient opening diameter in a region sandwiched between a pair of bit lines and thereby provide a semiconductor device in which a high-quality contact using the opening is formed.;The semiconductor device includes a first conductive layer, a first interlayer insulating film, a bit line, a first insulating film, a second interlayer insulating film, and a second conductive layer. The first insulating film that covers a side surface of the bit line has a portion perpendicular to a main surface of a semiconductor substrate in a region lower than a position lower than an uppermost portion of the first insulating film by a thickness, in a direction along the main surface of the semiconductor substrate, of the first insulating film that covers the side surface of the bit line at a lowermost portion of the bit line.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including a main surface; a first conductive layer formed over the main surface; a first interlayer insulating film formed over the first conductive layer; a bit line located over the first interlayer insulating film; a first insulating film formed so as to cover an upper surface and a side surface of the bit line; a second interlayer insulating film formed so as to cover the first interlayer insulating film and the first insulating film; and a second conductive layer that penetrates the first and the second interlayer insulating films and reaches the first conductive layer,
wherein the first insulating film has an upper portion and a lower portion,wherein the upper portion extends in a vertical direction from an uppermost point on the first insulating film to a first location located between the uppermost point on the first insulating film and the upper surface of the bit line, and the upper portion has a first thickness, measured from the uppermost point to the first location, equaling to a second thickness of a portion of the first insulating film extending in a horizontal direction from the sidewall surface of the bit line to a second location that, is an end portion of the first insulating film, wherein the lower portion extends from the first location to the main surface of the semiconductor substrate, andwherein an entire side surface of the lower portion of the insulating film has an angle greater than or equal to 85 degrees and equal to or less than 90 degree with respect to the main surface of semiconductor substrate.