Dynamic compensation in advanced process control

摘要

A method of semiconductor fabrication is provided. The method includes providing a model for a device parameter of a wafer as a function of first and second process parameters. The first and second process parameters correspond to different wafer characteristics, respectively. The method includes deriving target values of the first and second process parameters based on a specified target value of the device parameter. The method includes performing a first fabrication process in response to the target value of the first process parameter. The method includes measuring an actual value of the first process parameter thereafter. The method includes updating the model using the actual value of the first process parameter. The method includes deriving a revised target value of the second process parameter using the updated model. The method includes performing a second fabrication process in response to the revised target value of the second process parameter.

主权项

1. A method, comprising:
providing a model for a device parameter of a wafer as a function of first and second process parameters, the device parameter corresponding to an electrical wafer characteristic, and the first and second process parameters corresponding to different physical wafer characteristics, respectively; deriving target values of the first and second process parameters based on a specified target value of the device parameter; performing a first fabrication process on the wafer in response to the target value of the first process parameter; thereafter measuring an actual value of the first process parameter obtained as a result of the first fabrication process; updating the model using the actual value of the first process parameter; deriving a revised target value of the second process parameter using the updated model; performing a second fabrication process on the same wafer in response to the revised target value of the second process parameter; and thereafter measuring an actual value of the device parameter; wherein the updating the model and the deriving the revised target value are performed so that the measured actual value of the device parameter substantially approaches the specified target value of the device parameter.