METHOD OF ION IMPLANTATION THROUGH A PHOTORESIST MASK

摘要

A METHOD OF ION IMPLANTATION THROUGH A PHOTORESIST MASK of the Invention An improvement in the method of ion implantation into a semiconductor substrate through a photoresist mask wherein the photoresist mask is subjected to an RF gas plasma oxidation prior to the ion implantation step for a period sufficient to reduce the thickness of the photoresist layer. The ion implantation is then carried out through the treated photoresist mask.