PROCESS FOR EPITAXIALLY GROWING SILICON THIN LAYERS

摘要

Process for compensating for the presence of boundary charges in semiconductor layers which are grown on a monocrystalline insulating substrate including the stop of introducing doping atoms into the region of the boundary charges. The doping atoms can be introduced before any semiconductor has been deposit?? after a thin layer of the semiconductor has been epitaxially grown on the substrate, or after all of the epitaxial layer has been grown.