发明名称 Control circuit of semiconductor switching element
摘要 A control circuit of a semiconductor switching element includes a gate driving circuit and a negative power source circuit. The gate driving circuit drives the semiconductor switching element disposed on a power supply path of an inductive load. The negative power source circuit is connected between output terminals of the semiconductor switching element. The negative power source circuit includes a series circuit of a capacitor and a diode in a forward direction connected from a negative potential side terminal to a positive potential side terminal of the output terminals. A common connection point of the capacitor and the diode in the negative power source circuit is connected to a negative power source terminal of the gate driving circuit.
申请公布号 US9490800(B2) 申请公布日期 2016.11.08
申请号 US201514731591 申请日期 2015.06.05
申请人 DENSO CORPORATION 发明人 Kimura Tomonori
分类号 H03B1/00;H03K17/687 主分类号 H03B1/00
代理机构 Posz Law Group, PLC 代理人 Posz Law Group, PLC
主权项 1. A control circuit of a semiconductor switching element comprising: a gate driving circuit driving the semiconductor switching element disposed on a power supply path of an inductive load; and a negative power source circuit connected between output terminals of the semiconductor switching element, the negative power source circuit including a series circuit of a capacitor and a diode in a forward direction connected from a negative potential side terminal to a positive potential side terminal of the output terminals, wherein a common connection point of the capacitor and the diode in the negative power source circuit is connected to a negative power source terminal of the gate driving circuit.
地址 Kariya JP
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