发明名称 FILM FOR TEMPORARY FIXING, FILM SHEET FOR TEMPORARY FIXING AND SEMICONDUCTOR DEVICE
摘要 The film for temporary fixing of the present invention is a film for temporary fixing which is used in a processing method of a semiconductor wafer, the method including a temporary fixing step of temporarily fixing the semiconductor wafer to a support via the film for temporary fixing, a processing step of processing the semiconductor wafer that is temporarily fixed to the support, and a separation step of separating the processed semiconductor wafer from the support and the film for temporary fixing, contains (A) a high molecular weight component and (B) a silicone-modified resin, and has a modulus of elasticity of from 0.1 to 1000 MPa at 23° C. after being heated for 30 minutes at 110° C. and for 1 hour at 170° C.
申请公布号 US2016326409(A1) 申请公布日期 2016.11.10
申请号 US201415107985 申请日期 2014.12.24
申请人 HITACHI CHEMICAL COMPANY, LTD. 发明人 TOKUYASU Takahiro;NATSUKAWA Masanori;OOYAMA Yasuyuki
分类号 C09J133/00;H01L21/78;H01L25/065;C09J7/02;H01L21/683 主分类号 C09J133/00
代理机构 代理人
主权项 1. A film for temporary fixing used in a processing method of a semiconductor wafer, the method including: a temporary fixing step of temporarily fixing the semiconductor wafer to a support via the film for temporary fixing; a processing step of processing the semiconductor wafer that is temporarily fixed to the support; and a separation step of separating the processed semiconductor wafer from the support and the film for temporary fixing; the film for temporary fixing comprising (A) a high molecular weight component and (B) a silicone-modified resin, wherein a modulus of elasticity of the film for temporary fixing after being heated for 30 minutes at 110° C. and for 1 hour at 170° C. is from 0.1 to 1000 MPa at 23° C.
地址 Tokyo JP