Method of selectively removing a region formed of silicon oxide and plasma processing apparatus

摘要

Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region.

主权项

1. A method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon, the method comprising: performing a plurality of sequences, each sequence including: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container, wherein after performing the plurality of sequences such that the second region of the workpiece is exposed to the plasma of the processing gas to form an oxidized region in the second region, exposing the workpiece to plasma of a reducing gas which is generated within the processing container in order to reduce the oxidized region of the second region of the workpiece.