| 主权项 |
1. A semiconductor device comprising:
a silicon substrate; a metal gate electrode over the silicon substrate; a gate insulating film between the metal gate electrode and the silicon substrate, the gate insulating film comprising metal oxide, a metal silicate, a metal oxynitride, or a nitrided metal silicate, each of the metal oxide, the metal silicate, the metal oxynitride, and the nitrided metal silicate comprising at least one metal selected from the group consisting of hafnium, lanthanum, aluminum, zirconium, and tantalum; as viewed in a cross section, a sidewall film on both of oppositely facing sides of the metal gate electrode, as viewed in the cross section, an offset spacer between the sidewall film and the metal gate electrode; mixed crystal layers in recess regions of a surface of the silicon substrate, the recess regions being at both sides of the metal gate electrode, the mixed crystal layer having a lattice constant different from a lattice constant of silicon; as viewed in the cross section, an insulating film, on both of the oppositely facing sides of the gate electrode, the insulating film not on the metal gate electrode; a work function control film between the gate insulating film and the gate electrode; and an adhesive layer on the work function control film. |
