Opening in a multilayer polymeric dielectric layer without delamination

摘要

An integrated circuit and method with a delamination free opening formed through multiple levels of polymer dielectric. The opening has a vertical sidewall and no interface between adjacent levels of polymer dielectric is exposed on the vertical sidewall.

主权项

1. A process of forming an integrated circuit, comprising the steps:
coating the integrated circuit with a first layer of a photosensitive polymer dielectric; exposing a first opening in the first layer using a first opening photo mask; developing the first layer to form the first opening with a first layer edge; curing the first layer; coating the integrated circuit with an overlying layer of a photosensitive polymer dielectric; exposing an IC opening in the overlying layer of photosensitive polymer layer using an IC opening photomask; developing the overlying layer of photosensitive polymer to form an IC opening; curing the overlying layer; coating the integrated circuit with a second layer of a photosensitive polymer dielectric; exposing a second opening in the second layer of photosensitive polymer layer using a second opening photomask; developing the second layer of photosensitive polymer to form the second opening; wherein the IC opening and the first opening are concentric; wherein the IC opening is smaller than the first opening; and wherein the overlying layer covers the first layer edge.