Microelectronic assemblies formed using metal silicide, and methods of fabrication

摘要

Two microelectronic components (110, 120), e.g. a die and an interposer, are bonded to each other. One of the components' contact pads (110C) include metal, and the other component has silicon (410) which reacts with the metal to form metal silicide (504). Then a hole (510) is made through one of the components to reach the metal silicide and possibly even the unreacted metal (110C) of the other component. The hole is filled with a conductor (130), possibly metal, to provide a conductive via that can be electrically coupled to contact pads (120C.B) attachable to other circuit elements or microelectronic components, e.g. to a printed circuit board.

主权项

1. A fabrication method comprising:
providing a first structure comprising circuitry comprising one or more contact pads each of which comprises metal; providing a substrate comprising a first side comprising one or more silicon regions, the substrate also comprising a second side opposite to the first side; attaching the first structure to the substrate so that at least a portion of the metal of each contact pad reacts with at least a portion of the silicon of a corresponding silicon region to form metal silicide; forming one or more holes in the second side of the substrate, each hole reaching the metal silicide formed by reacting at least a portion of the metal of the corresponding contact pad; and forming a conductive via in each hole, the conductive via reaching at least one of the metal of the corresponding contact pad and the corresponding metal silicide, the conductive via extending to the substrate's surface at the second side of the substrate.