发明名称 Semiconductor magnetic memory device and method for manufacturing the same
摘要 A semiconductor memory device includes a first insulating layer covering a substrate, a first contact plug and a second contact plug each penetrating the first insulating layer, a first data storage element disposed on the first contact plug, and a second data storage element disposed on the second contact plug. The first contact plug includes a vertically extending portion and a horizontally extending portion arranged between the vertically extending portion and the first data storage element, and the second contact plug extends substantially vertically from a top surface of the substrate. The first data storage element is laterally spaced apart from the vertically extending portion when viewed in plan view. The first data storage element is disposed on the horizontally extending portion.
申请公布号 US9502291(B2) 申请公布日期 2016.11.22
申请号 US201514738814 申请日期 2015.06.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Lee Kilho;Han Shinhee
分类号 H01L21/768;H01L29/423;H01L21/311;H01L29/66;H01L43/08;H01L43/10;H01L43/12 主分类号 H01L21/768
代理机构 Renissance IP Law Group LLP 代理人 Renissance IP Law Group LLP
主权项 1. A semiconductor memory device, comprising: a first insulating layer covering a substrate; a first contact plug and a second contact plug, each penetrating the first insulating layer; a first data storage element disposed on the first contact plug and electrically connected to a portion of the substrate through the first contact plug; and a second data storage element disposed on and overlapping the second contact plug and electrically connected to a portion of the substrate through the second contact plug, wherein the first contact plug comprises: a vertically extending portion; and a horizontally extending portion arranged between the vertically extending portion and the first data storage element, wherein the second contact plug vertically extends from a top surface of the substrate, wherein the first data storage element is laterally spaced apart from the vertically extending portion, wherein the first data storage element is disposed on the horizontally extending portion, wherein a plurality of first contact plugs is provided and a plurality of second contact plugs is provided, wherein the plurality of first contact plugs and the plurality of second contact plug are alternately and repeatedly arranged, wherein each odd-numbered one of the contact plugs is one of the first contact plugs, and wherein each even-numbered one of the contact plugs is one of the second contact plugs.
地址 KR